کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5348103 | 1503574 | 2017 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We present a comparative study of the symmetric metal-SI GaAs-metal (M-S-M) diodes with full-area contacts on both device sides, in order to demonstrate the effect of contact metal work function in a straightforward way. We compare the conventional high work function Pt contact versus the less explored low work function Mg contact. The Pt-S-Pt, Mg-S-Mg and mixed Mg-S-Pt structures are characterized by the current-voltage measurements, and individual Pt-S and Mg-S contacts are investigated by the X-ray photoelectron spectroscopy (XPS). The transport measurements of Mg-S-Pt structure show a significant current decrease at low bias while the Mg-S-Mg structure shows saturation current at high voltages more than an order of magnitude lower with respect to the Pt-S-Pt reference. The phenomena observed in Mg-containing samples are explained by the presence of insulating MgO layer at the M-S interface, instead of the elementary Mg, as confirmed by the XPS analysis. Alternative explanations of the influence of MgO layer on the effective resistance of the structures are presented. The reported findings have potential applications in M-S-M sensors and radiation detectors based on SI GaAs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 395, 15 February 2017, Pages 131-135
Journal: Applied Surface Science - Volume 395, 15 February 2017, Pages 131-135
نویسندگان
F. Dubecký, D. Kindl, P. HubÃk, M. MiÄuÅ¡Ãk, M. Dubecký, P. BoháÄek, G. Vanko, E. Gombia, V. NeÄas, J. MudroÅ,