Experiments for improving fabrication, recovery and surface-protection of Cs3Sb photocathode

We examined 1) the photocurrent from Cs3Sb photocathode as a function of anode voltage below 200 V, 2) the relationship between the quantum efficiency of photoemission and the conditions for fabrication by the sandwich method, 3) recovery of the photoemission by additional Cs deposition, and 4) the effects of surface protection of Cs3Sb photocathodes by WO3 and Cr2O3 films in the passive state. The photocurrent had a maximum at approximately 68 V except when we increased the anode voltage extraordinarily slowly. Cs3Sb photocathodes were fabricated by increasing the temperature of sandwiched layers of Sb, Cs and Sb deposited on the fine tips of eight cathodes at less than −12 °C. Cs3Sb photocathodes having higher quantum efficiency were fabricated by smoothly increasing the temperature of the layers quickly after we deposited the second Sb layer. The photocurrent from the Cs3Sb photocathodes was significantly higher when Cs was deposited at temperatures of 50-70 °C. Deposition of a one- to three- atomic-layer W or Cr film extended the photoemission lifetime after the layers were oxidized to WO3 or Cr2O3 in the passive state due to oxidation. The WO3 or Cr2O3 in the passive state provided more surface protection as their thickness increased.