Organic and organic-inorganic hybrid polymer thin films deposited by PECVD using TEOS and cyclohexene for ULSI interlayer-dielectric application

Organic and organic-inorganic hybrid polymer thin films were deposited on Si(1 0 0) substrates at various ratios of TEOS (tetraethoxysilane) to cyclohexene by the plasma enhanced chemical vapor deposition (PECVD) method. The as-grown polymerized thin films were first analyzed by FT-IR and XPS. The results of FT-IR showed that the hybrid polymer thin films were polymerized with each fragmented precursor. The XPS results showed the chemical species and binding energies of each species. The Si 2p core-level spectra from the hybrid polymer thin film showed the status of the Si oxidation number. Impedance analysis was utilized for the measurement of the capacitance values and I-V curves, and an ultra low-k value and leakage current density of 1.75 and 10−9 A/cm2 at 1 MV/cm were obtained, respectively.