Influences of post-annealing on structural, morphological and electrical properties of Cd1−xMnxTe films

Cd1−xMnxTe films were grown on SnO2:F (FTO)-coated glass substrates by close-spaced sublimation method. After deposition, the films were etched by Br-MeOH (BM) solution followed by two separate annealing processes. One was only carried out in N2 directly, and the other was further annealed in MnCl2. XRD, SEM, EDS and I-V measurement were employed to investigate the influences of post-annealing on the structure and properties of Cd1−xMnxTe films. Uniform Cd1−xMnxTe films with high quality and high resistivity were obtained by BM/N2 post-treatment.