Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring

- Full ALD Ta2O5-based ReRAM stacks was grown.
- At top Ta2O5/TiN interface TaOxNy layer is observed.
- A thin Al2O3 layer blocks TaOxNy formation at top Ta2O5/TiN interface.
- Stack with additional Al2O3 layer demonstrated fast and abrupt switching.