کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349353 | 1503615 | 2015 | 61 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metastable Ge nanocrystalline in SiGe matrix for photodiode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Amorphous Si1âxGex films were prepared by co-sputtering on an oxidized Si wafer, followed by rapid thermal annealing to form nanocrystal films. The formation of Ge nanocrystals was not at thermodynamic equilibrium formed in the amorphous Si1âxGex matrix. High-resolution transmission electron microscopy was used to characterize the increase in the size of the grains in the Ge nanocrystals as the Ge content increased. The Ge nanocrystals have a greater absorption in the near-infrared region and higher carrier mobility than SiGe crystals, and the variation in their grain sizes can be used to tune the bandgap. This characteristic was exploited herein to fabricate n-Si1âxGex/p-Si1âxGex p-n diodes on insulating substrates, which were then examined by analyzing their current-voltage characteristics. The rectifying property became stronger as the fraction of Ge in the Si1âxGex films increased. The Si1âxGex diodes are utilized as photodetectors that have a large output current under illumination. This paper elucidates the correlations between the structural, optical and electrical properties and the p-n junction performance of the film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 349, 15 September 2015, Pages 387-392
Journal: Applied Surface Science - Volume 349, 15 September 2015, Pages 387-392
نویسندگان
Yao-Tsung Ouyang, Chien-Hao Su, Jenq-Yang Chang, Shao-Liang Cheng, Po-Chen Lin, Albert T. Wu,