کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349475 | 1503620 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced light emission from Si nanocrystals produced using SiOx/SiO2 multilayered silicon-rich oxides
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhanced light emission from Si nanocrystals produced using SiOx/SiO2 multilayered silicon-rich oxides Enhanced light emission from Si nanocrystals produced using SiOx/SiO2 multilayered silicon-rich oxides](/preview/png/5349475.png)
چکیده انگلیسی
The light emission from Si nanocrystals (NCs) produced in SiO2 by annealing of SiOx/SiO2 multilayered silicon-rich oxide (SRO) is examined as a function of the SiOx layer thickness. Multilayered SRO structures are shown to produce a significant increase in emission intensities with a large redshift of spectra as compared with a single-layer SRO film. A multilayered SRO film with â¼6-nm thick SiO1.45 layers exhibits a 13-fold increase in the emission intensity with a redshift of â¼70Â nm relative to a single-layer SiO1.45 SRO film with a thickness equivalent to the total SiO1.45 layer thickness in the multilayered film. The transmission electron microscopy analyses indicate that the enhancement of the emission intensity with the redshift of spectrum is caused by the enhanced aggregation of phase separated Si atoms in the former SiOx layers due to the hindering of interlayer diffusion of Si by the neighboring SiO2 layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 344, 30 July 2015, Pages 213-216
Journal: Applied Surface Science - Volume 344, 30 July 2015, Pages 213-216
نویسندگان
Jong-Hwan Yoon,