کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349733 | 1503646 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Phonon frequency variations in high quality InAs1âxSbx epilayers grown on GaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Undoped InAs1âxSbx epilayers with different compositions (0.55 â¤Â àâ¤Â 0.78) were grown by molecular beam epitaxy on semi-insulating GaAs (1 0 0) substrates. The quality of the samples was determined by high resolution X-ray diffraction (HRXRD) rocking curves and the lattice dynamics were studied by using Raman spectroscopy at room temperature. Optical phonon frequency range shows strong two-mode phonon behavior for all compositions. With an increase in the Sb composition, InAs-like longitudinal-optical (LO), and transverse-optical (TO) phonon peaks exhibit a blue shift whereas a red-shift was observed for InSb-like LO phonon peak. Moreover, transverse-acoustic (TA) and mixed mode InSb-like 2IA/2TA phonon modes were identified successfully. HRXRD results revealed that the best full width at half maximum value reported up to now was achieved for the sample with a composition of x = 0.55 and thickness of 550 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 318, 1 November 2014, Pages 28-31
Journal: Applied Surface Science - Volume 318, 1 November 2014, Pages 28-31
نویسندگان
M. ErkuÅ, U. Serincan,