کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5349782 1503646 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improvement of physical properties of ZnO thin films by tellurium doping
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Improvement of physical properties of ZnO thin films by tellurium doping
چکیده انگلیسی
This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te-ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 318, 1 November 2014, Pages 319-323
نویسندگان
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