کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349827 | 1503625 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
PECVD synthesis, optical and mechanical properties of silicon carbon nitride films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: PECVD synthesis, optical and mechanical properties of silicon carbon nitride films PECVD synthesis, optical and mechanical properties of silicon carbon nitride films](/preview/png/5349827.png)
چکیده انگلیسی
SiCxNy thin films were synthesized at a temperature of 700 °C by the PECVD process, using trimethylphenylsilane C6H5Si(CH3)3 (TMPhS) and ammonia as a reactive mixture. The effect of NH3 dilution on the structure and chemical bonding of SiCxNy films was investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy and energy-dispersive X-ray analysis. The influence of deposition conditions on the transmittance, the optical band gap, the hardness and the Young's modulus of SiCxNy films was studied. It was shown that the chemical composition and the functional properties of the films are governed by the initial pressure ratio of NH3 to TMPhS. The variation of the ratio enables the film of different composition to be deposited, e.g. SiCx, SiCxNy and SiNy. It was shown that the films deposited from a reactive mixture with the highest ammonia dilution had a transmittance comparable to that of SiO2 and hardness of 23 GPa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 339, 1 June 2015, Pages 102-108
Journal: Applied Surface Science - Volume 339, 1 June 2015, Pages 102-108
نویسندگان
Evgeniya Ermakova, Yurii Rumyantsev, Artur Shugurov, Alexey Panin, Marina Kosinova,