کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349857 | 1503652 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al2O3 substrate by Low-Pressure Metal-Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance-voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20Â nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al0.2GaN0.8/GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 312, 1 September 2014, Pages 102-106
Journal: Applied Surface Science - Volume 312, 1 September 2014, Pages 102-106
نویسندگان
Ladislav Harmatha, Ľubica StuchlÃková, Juraj Racko, Juraj Marek, Juraj PecháÄek, Peter Benko, Michal Nemec, Juraj Breza,