کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5350138 1388113 2017 20 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Numerical analysis on effect of annealing mc-Si ingot grown by DS process for PV application
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Numerical analysis on effect of annealing mc-Si ingot grown by DS process for PV application
چکیده انگلیسی
Silicon solar cells play a crucial role in Photo voltaic (PV) application. We have numerically investigated thermal stress and normal stress components (Sigma 11, Sigma 22, Sigma 33 and sigma 12) by using finite volume method. The maximum thermal stress has low value at the centre region for 900 K and 700 K annealing temperatures comparing all the cases. The maximum thermal stress at peripheral region is low for 700 K annealing compared to 900 K annealing. The annealing effect of mc-Si ingot normal stress components is discussed. At 700 K annealing temperature the normal stress in 11 and 33 direction has lower maximum and at the 900 K annealing temperature the normal stress in 22 and 12 direction has lower maximum.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 418, Part A, 1 October 2017, Pages 207-215
نویسندگان
, , , ,