کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5350164 | 1388113 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin film of p-type cupric oxide (p-CuO) is grown on silicon (n-Si) substrate by using chemical bath deposition (CBD) technique and a precise control of thickness from 60Â nm to 178Â nm has been achieved. The structural properties and stoichiometric composition of the grown films are observed to depend significantly on the growth time. The chemical composition, optical properties, and structural quality are investigated in detail by employing XRD, ellipsometric measurements and SEM images. Also, the elemental composition and the oxidation states of Cu and O in the grown samples have been studied in detail by XPS measurements. Thin film of 110Â nm thicknesses exhibited the best performance in terms of crystal quality, refractive index, dielectric constant, band-gap, and optical properties. The study suggests synthesis route for developing high quality CuO thin film using CBD method for electronic and optical applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 418, Part A, 1 October 2017, Pages 380-387
Journal: Applied Surface Science - Volume 418, Part A, 1 October 2017, Pages 380-387
نویسندگان
Jenifar Sultana, Somdatta Paul, Anupam Karmakar, Ren Yi, Goutam Kumar Dalapati, Sanatan Chattopadhyay,