کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5350382 | 1503630 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and simulation of single crystal p-type Si nanowire using SOI technology
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication and simulation of single crystal p-type Si nanowire using SOI technology Fabrication and simulation of single crystal p-type Si nanowire using SOI technology](/preview/png/5350382.png)
چکیده انگلیسی
Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70-85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I-V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 334, 15 April 2015, Pages 87-93
Journal: Applied Surface Science - Volume 334, 15 April 2015, Pages 87-93
نویسندگان
Arash Dehzangi, Farhad Larki, Mahmud G. Naseri, Manizheh Navasery, Burhanuddin Y. Majlis, Mohd F. Razip Wee, M.K. Halimah, Md. Shabiul Islam, Sawal H. Md Ali, Elias Saion,