Recent advances on dielectrics technology for SiC and GaN power devices

This paper reviews some recent advances in dielectrics technology currently adopted to optimize the performances of SiC and GaN transistors. In particular, in the case of SiC the discussion is focused on the optimization of SiO2/SiC interfaces in 4H-SiC MOSFETs technology by passivation processes of the gate oxides. On the other hand, the current trends in dielectrics passivation for GaN-based HEMTs to limit the gate leakage and the current collapse are discussed.