کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5350807 | 1503663 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room temperature surface passivation of silicon for screen printed c-Si solar cells by HiTUS reactive sputter deposition
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The dielectric coatings used on silicon solar cells serve a dual purpose: a surface passivation layer and as an antireflection coating. Silicon nitride films were deposited by sputtering, using a HiTUS technology, on crystalline silicon wafers. Films were deposited without substrate heating, which simplifies the deposition process, from a polycrystalline silicon target in a mixed ambient of argon, nitrogen and hydrogen gasses. After the deposition, the minority carrier lifetime, refractive index and deposition rate were measured. Photo conductance decay measurements show that the minority carrier lifetime increased up to 26 μs on a 40 Ω/â¡ doped 1 Ω cm p-type ã1 0 0ã Cz-Si pseudo square wafer (compared to 1 μs measured for bare wafer) and up to 984 μs for a double-side polished 3 Ω cm Cz-Si wafer (from â¼70 μs measured for uncoated wafer). Spectroscopic ellipsometry measurements showed that the refractive index of the deposited films was 2.05 at λ = 632.8 nm; deposition rate was measured at 22.4 nm/min. The films were used to prepare screen-printed c-Si solar cells. The resultant cells showed an efficiency of 15.14% with silicon nitride films grown without the use of silane or substrate heating.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 301, 15 May 2014, Pages 51-55
Journal: Applied Surface Science - Volume 301, 15 May 2014, Pages 51-55
نویسندگان
P.M. Kaminski, K. Bass, G. Claudio, J.M. Walls,