کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5350956 | 1503556 | 2017 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, the organic light-emitting diodes (OLEDs) based on Alq3 are fabricated. In order to make clear the transport mechanism of carriers in organic light-emitting devices at low temperature, detailed electroluminescence transient response and the current-voltage-luminescence (I-V-L) characteristics under different temperatures in those OLEDs are investigated. It founds that the acceleration of brightness increases with increasing temperature is maximum when the temperature is 200Â K and it is mainly affected by the electron transport layer (Alq3). The MoO3 injection layer and the electroluminescent layer have great influence on the delay time when the temperature is 200Â K. Once the temperature is greater than 250Â K, the delay time is mainly affected by the MoO3 injection layer. On the contrary, the fall time is mainly affected by the electroluminescent material. The Vf is the average growth rate of fall time when the temperature increases 1Â K which represents the accumulation rate of carriers. The difference between Vf caused by the MoO3 injection layer is 0.52Â us/K and caused by the electroluminescent material Ir(ppy)3 is 0.73Â us/K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 413, 15 August 2017, Pages 191-196
Journal: Applied Surface Science - Volume 413, 15 August 2017, Pages 191-196
نویسندگان
Chao Yuan, Min Guan, Yang Zhang, Yiyang Li, Shuangjie Liu, Yiping Zeng,