Self-assembly of condensates with advanced surface by means of the competing field selectivity and Gibbs-Thomson effect

Copper and silicon layers were deposited using the accumulative plasma-condensate system. Their surface was found to possess the complex developed morphology using SEM technique. Competing processes of the field selectivity and Gibbs-Thomson effect are considered to describe the formation of the surface. The mathematical model is created on the basis of these effects which describes self-assembly of the surface at the form of adjoining elements of an elliptic section. The comparative analyses of theoretical and experimental results are given.