کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5351240 | 1503667 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration](/preview/png/5351240.png)
چکیده انگلیسی
The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 Ã 10â3 Ω cm for undoped ZnO to 2.05 Ã 10â3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 297, 1 April 2014, Pages 125-129
Journal: Applied Surface Science - Volume 297, 1 April 2014, Pages 125-129
نویسندگان
Hanearl Jung, Doyoung Kim, Hyungjun Kim,