کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5351370 | 1503657 | 2014 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of colloidal silica abrasives with different sizes and their chemical-mechanical polishing performance on 4H-SiC (0Â 0Â 0Â 1)
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of colloidal silica abrasives with different sizes and their chemical-mechanical polishing performance on 4H-SiC (0Â 0Â 0Â 1) Characterization of colloidal silica abrasives with different sizes and their chemical-mechanical polishing performance on 4H-SiC (0Â 0Â 0Â 1)](/preview/png/5351370.png)
چکیده انگلیسی
In this paper, a detailed analysis is presented to characterize the performance of colloidal silica abrasives based slurry with different abrasive sizes on CMP of hexagonal 4H-SiC wafer, and indicates that the abrasive size is an important factor to determine the efficiency of CMP and the final planarization quality of wafer surface. The authors also present a detailed hypothesis to describe the material removal mechanism of 4H-SiC by colloidal silica abrasives during CMP process, and design two groups of experiments to demonstrate the rationality of the hypothesis. Furthermore, the authors put forward some suggestions to optimize the CMP efficiency and planarization quality of 4H-SiC wafer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 307, 15 July 2014, Pages 414-427
Journal: Applied Surface Science - Volume 307, 15 July 2014, Pages 414-427
نویسندگان
Xiaolei Shi, Guoshun Pan, Yan Zhou, Zhonghua Gu, Hua Gong, Chunli Zou,