Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

- Ni-Al co-doped ZnO (NiAl:ZnO) composite thin films were deposited by DC sputtering at low sputtering power.
- All films showed a highly preferential (0 0 2) c-axis orientation.
- NiAl:ZnO (5 wt% Ni) film deposited at 40 W at 6.0 mTorr has the lowest resistivity of 2.19 × 10−3 Ω cm.