Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(0Â 0Â 1) wafers processed and nanopackaged in a clean room environment

- High quality Si(0 0 1):H surface is obtained in a cleanroom environment.
- The transportation of Si:H surfaces in ambient conditions is feasible due to protection by a temporarily bonded cap.
- The quality of UHV de-bonded Si:H surfaces allows for construction of DB nanostructures.
- We characterize the DBs on Si(0 0 1):H surfaces by means of LT-STM/STS.