کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5351820 1503676 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se2 thin films
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The influence of different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se2 thin films
چکیده انگلیسی

- The influence of two different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se2 (CIGS) thin films was investigated.
- Voids were observed at the CIGS/SLG interface of the CIGS films.
- Ordered vacancy compound (OVC) phase were observed in the CIGS films.
- The metallic precursors deposited with the upright-location sputter gun might be more appropriate to prepare CIGS thin films than those sputtered with the titled-location gun.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 288, 1 January 2014, Pages 109-114
نویسندگان
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