The reduction of critical H implantation dose for ion cut by incorporating B-doped SiGe/Si superlattice into Si substrate

The reduction of critical H implantation dose for ion cut by incorporating B-doped SiGe/Si superlattice into Si substrate

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 385, 1 November 2016, Pages 42-46

Zhongying Xue, Da Chen, Pengfei Jia, Xing Wei, Zengfeng Di, Miao Zhang,