کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5351934 | 1503582 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MOCVD growth of CdO very thin films: Problems and ways of solution
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper the growth of CdO by the MOCVD technique at atmospheric pressure has been studied in order to achieve very thin films of this material on r-sapphire substrates. The growth evolution of these films was discussed and the existence of a threshold thickness, below which island-shaped structures appear, was demonstrated. Some alternatives to reduce this threshold thickness have been proposed in the frame of the analysis of the crystal growth process. The morphology and structural properties of the films were analyzed by means of SEM and HRXRD. High-quality flat CdO samples were achieved with thicknesses up to 20Â nm, which is five times thinner than the values previously reported in the literature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 385, 1 November 2016, Pages 209-215
Journal: Applied Surface Science - Volume 385, 1 November 2016, Pages 209-215
نویسندگان
Adelaida Huerta-Barberà , LluÃs Manel Guia, Oleksii Klymov, Vicente MarÃn-Borrás, Carmen MartÃnez-Tomás, Julen Tamayo-Arriola, Alejandro Kurtz, Miguel Montes Bajo, Elias Muñoz, Adrian Hierro, Vicente Muñoz-Sanjosé,