کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5352085 | 1503678 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of Schottky barrier diodes using H2O2-treated non-polar ZnO 101¯0 substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Non-polar single crystal ZnO 101¯0 substrates with hydrogen peroxide (H2O2) treatment were characterized and applied to Schottky barrier diodes. Formation of a ZnO2 layer with a polycrystalline structure was confirmed by 2θ scans of X-ray diffraction (XRD) measurements. Tails of the X-ray rocking curve of ZnO 101¯0 planes were broadened with increase in H2O2 treatment time. Grain structures were clearly observed on the surfaces of ZnO 101¯0 substrates with H2O2 treatment by an atomic force microscope, and the root mean square roughness of the ZnO2 surface was about 5 nm. The current density-voltage (J-V) characteristics of Pd/ZnO/Al structures using ZnO 101¯0 substrates without H2O2 treatment were ohmic. The J-V characteristics of Pd/ZnO2/ZnO/Al structures using ZnO 101¯0 substrates with H2O2 treatment time of 5 min showed good rectifying characteristics. The ideality factor n of this diode was 1.7 and the barrier height between Pd films and the ZnO2 layer on the ZnO 101¯0 plane was estimated to be 0.92 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 286, 1 December 2013, Pages 126-130
Journal: Applied Surface Science - Volume 286, 1 December 2013, Pages 126-130
نویسندگان
Yasuhiro Kashiwaba, Mio Sakuma, Takami Abe, Akira Nakagawa, Ikuo Niikura, Yasube Kashiwaba, Masahiro Daibo, Hiroshi Osada,