کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5352143 | 1503564 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
In recent years, gas cluster ion beams (GCIB) have become the cutting edge of ion beam technology to sputter etch organic materials in surface analysis. However, little is currently known on the ability of argon cluster ions (Arn+) to etch metal oxides and other technologically important inorganic compounds and no depth profiles have previously been reported. In this work, XPS depth profiles through a certified (European standard BCR-261T) 30Â nm thick Ta2O5 layer grown on Ta foil using monatomic Ar+ and Ar1000+ cluster ions have been performed at different incident energies. The preferential sputtering of oxygen induced using 6Â keV Ar1000+ ions is lower relative to 3Â keV and 500Â eV Ar+ ions. Ar+ ions exhibit a steady state O/Ta ratio through the bulk oxide but Ar1000+ ions show a gradual decrease in the O/Ta ratio as a function of depth. The depth resolution and etch rate is substantially better for the monatomic beam compared to the cluster beam. Higher O concentrations are observed when the underlying Ta bulk metal is sputtered for the Ar1000+ profiles compared to the Ar+ profiles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 405, 31 May 2017, Pages 79-87
Journal: Applied Surface Science - Volume 405, 31 May 2017, Pages 79-87
نویسندگان
Robin Simpson, Richard G. White, John F. Watts, Mark A. Baker,