کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5352187 | 1503564 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Site-controlled crystalline InN growth from the V-pits of a GaN substrate
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
A site-controlled crystalline InN growth from the V-pits of a GaN substrate was investigated. The V- pits were fabricated by epitaxial lateral growth of GaN over SiO2 disks patterned on a sapphire substrate. InN crystals were found to preferably grow on the inclined {10-11} crystal planes of the V-pits. A V-pit size of 1 μm or less can provide precise site-controlled InN nucleation at the V-pit bottom, while no InN was grown on the rest of the exposed GaN surfaces. The site-controlled nucleation is attributed to the low surface energy point created by the converging six {10-11} crystal facets at the V-pit bottom. When In source supply is below a certain value, this V-pit bottom is the only location able to aggregate enough active sources to start nucleation, thereby providing site-controlled crystal growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 405, 31 May 2017, Pages 449-454
Journal: Applied Surface Science - Volume 405, 31 May 2017, Pages 449-454
نویسندگان
Chien-Ting Kuo, Lung-Hsing Hsu, Yung-Yu Lai, Shan-Yun Cheng, Hao-Chung Kuo, Chien-Chung Lin, Yuh-Jen Cheng,