Low resistivity of N-doped Cu2O thin films deposited by rf-magnetron sputtering

N-doped Cu2O films were deposited on quartz substrates by reactive magnetron sputtering with a Cu2O target. The structure, deposited rate, and electrical properties of the films were influenced by the partial pressure of nitrogen. It is found that the structure and electrical properties of the films in different nitrogen partial pressure could be divided into three stages: the low, middle, and highly N-doping ranges. The film deposited at nitrogen partial pressure of 0.035 Pa has the lowest resistivity (0.112 Ω cm).