Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered films

- Arc discharge lithography produced by a metal tip was used to modify Zn3N2 thin films.
- Properties of resultant layers were examined by SEM, IBA and resistivity measurements.
- At higher voltage discharges, IBA confirmed Zn3N2 was transformed into ZnO:N crystals.
- Dimensions of submicron ZnO:N crystals was similar than initial Zn3N2 grain domains.
- Different stoichiometry between ZnO and Zn3N2 formed Zn droplets along the scan edges.