کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5352586 | 1503679 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermoelectric properties optimization of Al-doped ZnO thin films prepared by reactive sputtering Zn-Al alloy target
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Al-doped ZnO (AZO) has practical applications in the industry for thermoelectric generation, owing to its nontoxicity, low-cost and stability at high temperatures. In this study, AZO thin films with high quality were deposited on BK7 glass substrates at room-temperature by direct current reactive magnetron sputtering using Zn-Al alloy target. The deposited thin films were annealed at various temperatures ranging from 623 K to 823 K with a space of 50 K. It is found that the absolute value of Seebeck coefficient of AZO thin film annealed at 723 K increases stably with increasing of measuring temperature and reaches a value of â¼60 μV/K at 575 K. After that, Al-doping content was varied to further optimize the thermoelectric properties of AZO thin films. The power factor of AZO thin films with Al content of 3 wt% increased with increase of measuring temperature and the maximum power factor of 1.54 Ã 10â4 W mâ1Kâ2 was obtained at 550 K with the maximum absolute values of Seebeck coefficient of 99 μV/K, which is promising for high temperature thermoelectric application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 284, 1 November 2013, Pages 145-149
Journal: Applied Surface Science - Volume 284, 1 November 2013, Pages 145-149
نویسندگان
Ping Fan, Ying-zhen Li, Zhuang-hao Zheng, Qing-yun Lin, Jing-ting Luo, Guang-xing Liang, Miao-qin Zhang, Min-cong Chen,