کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5352687 | 1503573 | 2017 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
C-axis orientated AlN films deposited using deep oscillation magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: C-axis orientated AlN films deposited using deep oscillation magnetron sputtering C-axis orientated AlN films deposited using deep oscillation magnetron sputtering](/preview/png/5352687.png)
چکیده انگلیسی
Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acmâ2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acmâ2 improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acmâ2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 396, 28 February 2017, Pages 129-137
Journal: Applied Surface Science - Volume 396, 28 February 2017, Pages 129-137
نویسندگان
Jianliang Lin, Roman Chistyakov,