Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

► We examined Si surface layers modified by plasma immersion H+ implantation (PII). ► The PII-induced changes were studied by ellipsometry in the VIS range. ► PII creates a-Si inclusions, defects and tensile stress in a thin Si surface layer. ► The PII effect on the Si layer parameters enhances with increasing the H+ fluence.