کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5353029 | 1503683 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ab initio theoretical and photoemission studies on formation of 4H-SiC(0Â 0Â 0Â 1)/SiO2 interface
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Formation mechanisms of initial 4H-SiC (0Â 0Â 0Â 1)/SiO2 interface were analyzed by density functional theory (DFT) and angle-dependent X-ray photoelectron spectroscopy (ADXPS). Through the theoretical model calculations, either C or O interstitial is likely to exist in the oxidation process of 4H-SiC. Besides, there is one suboxide theoretically more easily to form and more stable than any others. The results of the ADXPS experiment revealed only one suboxide with shift of +0.94Â eV relative to the 4H-SiC bulk component rather than three ones, which verified the theoretical results. These calculation and experimental results demonstrated there is only one rather than three silicon suboxides that induced the high density of states in the 4H-SiC/SiO2 interface. Besides, we did some speculations about the formation mechanism of the initial 4H-SiC/SiO2 interface according to the theoretical and experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 280, 1 September 2013, Pages 500-503
Journal: Applied Surface Science - Volume 280, 1 September 2013, Pages 500-503
نویسندگان
Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu, Bin Liu, Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu, Guoguo Yan, Lixin Tian, Yiping Zeng,