Enhanced infrared emissivity of CeO2 coatings by La doping

Pure CeO2 and La doped CeO2 (LDC) coatings were prepared on nickel-based substrates by electron beam physical vapor deposition at 1173 K. The infrared emissivity in 2.5-25 μm of LDC coatings was enhanced with the increase of La concentration at high temperature 873-1273 K. Compared to the undoped CeO2 coating, the infrared emissivity of 16.7% LDC coating increases by 55%, and reaches up to 0.9 at 873 K. The enhancement of doped coatings' emissivity is attributed to the increasing lattice absorption and free-carrier absorption. The high emissivity LDC coatings show a promising potential in high temperature application.