n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 389, 15 December 2016, Pages 199-204

Minhuan Wang, Jiming Bian, Hongjun Sun, Weifeng Liu, Yuzhi Zhang, Yingmin Luo,