Structural and dielectric properties of Ba(X1/3Ta2/3)O3 thin films grown by RF-PLD

► Single phase Ba(Mg1/3Ta2/3)O3 and Ba(Zn1/3Ta2/3)O3 films grown by RF-PLD method on Pt-coated silicon substrates. ► Highly textured BXT thin films with cubic perovskite structure and low surface roughness were achieved. ► Unlike targets, the BXT films exhibit positive values of the temperature coefficient of the dielectric permittivity. ► BaMg1/3Ta2/3O3 and BaZn1/3Ta2/3O3 thin films with dielectric constant of about 22.5 and 25, respectively have been obtained.