کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5353326 | 1503672 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of light illumination and temperature on P3HT films, n-type Si, and ITO
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of light illumination and temperature on P3HT films, n-type Si, and ITO Effect of light illumination and temperature on P3HT films, n-type Si, and ITO](/preview/png/5353326.png)
چکیده انگلیسی
The secondary electron (SE) cutoff energy region spectra are recorded before (dark), during (light) and after laser exposure (dark) for P3HT, Si, and ITO. An SE cutoff energy shift is observed when the bare n-type doped Si substrate is exposed to 532Â nm light. This is attributed to the presence of a thin native oxide layer (â¼1.5Â nm) on Si. No energy shift is detected on the Ar sputtered clean Si. Also, no shift was observed for ITO. When exposed to light, a net SE energy cutoff shift was measured for P3HT deposited on both Si and ITO substrates at room temperature. However, no significant valence band maximum (VBM) energy shifts were measured for P3HT that was spun cast on both substrates under dark and light illumination. Furthermore, light effect was investigated at three different temperatures; 25, 70, and 160Â ÌC and it is found that for P3HT, the magnitude of the SE cutoff energy change is not only substrate dependent but also depends on temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 292, 15 February 2014, Pages 100-106
Journal: Applied Surface Science - Volume 292, 15 February 2014, Pages 100-106
نویسندگان
Louis Scudiero, Yang Shen, Mool C. Gupta,