Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05

- We grew niobium on topological insulator at different substrate temperatures.
- Local density of states is modified by deposited Nb islands.
- We found a downward shift of the Dirac point, since niobium acts as a donor.
- Nb grew in layer-by-layer growth mode up to an annealing temperature of 450 °C.
- We applied a new cleaving method allowing for sample heating of flux-grown TI.