Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO2 using the induced and secondary current measurements

- Positive charging of high purity amorphous SiO2 achieved by electron irradiation in a specially equipped scanning electron microscope.
- Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents.
- Study of isothermal detrapping for different temperatures (300-663 K).
- Analysis of the hole detrapping via a first order kinetics.
- Evaluation of the hole detrapping parameters (activation energy and frequency factor).