Complementary resistive switching mechanism in Ti-based triple TiOx/TiN/TiOx and TiOx/TiOxNy/TiOx matrix

► CRS characteristics are demonstrated in Pt/TiOx/TiN/TiOx/Pt and Pt/TiOx/TiOxNy/TiOx/Pt configurations. ► The observed CRS can be attributed to the combined effects of redox reactions and the formation of a conducting path. ► Control of the current level and threshold voltages by means of oxygen content in the middle layer.