High-rate and low-temperature growth of ZnO:Ga thin films by steered cathodic arc plasma evaporation

▸ ZnO:Ga (GZO) films are deposited on glass by steered cathodic arc plasma evaporation. ▸ GZO films are grown at a high growth rate (220 nm/min) and low temperature (120 °C). ▸ Films with low strain show low resistivity and high transparency. ▸ Droplet size is reduced when a high-melting-point GZO ceramic target is adopted. ▸ Metal-like conductivity indicates GZO films became degenerated semiconductors.