کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5353954 | 1503680 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of homo-buffer layer on structural, optical and electrical properties of ZnO:Al films
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Aluminum-doped ZnO (AZO) films were fabricated on glass by pulsed-laser deposition based on orthogonal design, and influences of homo-buffer layer on structural, optical and electrical properties of AZO films were investigated. The experiment results demonstrate that the homo-buffer layer is very beneficial to improve the quality of AZO films. In addition, both deposition temperature of homo-buffer layer (Thomo-buffer) and deposition oxygen pressure of homo-buffer layer (Phomo-buffer) have a considerable influence on the properties of AZO films. By optimizing the deposition parameters of homo-buffer layer and AZO film synthetically, the AZO film with low resistivity (2.13 Ã 10â4 Ω cm) and high transmittance (89.1%) has been obtained, which is a promising candidate material in transparent electrode applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 283, 15 October 2013, Pages 623-628
Journal: Applied Surface Science - Volume 283, 15 October 2013, Pages 623-628
نویسندگان
Q.K. Li, J.B. Wang, B. Li, X.L. Zhong, F. Wang, C.B. Tan,