Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

► Secondary phase exist in the RF sputtered CIGS films as it deposited at 150 °C and 500 °C. ► CIGS films deposited beyond 350 °C show (1 1 2) prefer orientation. ► Eg of the CIGS films increased with the increase of substrate temperature. ► Conductivity of the films is affected by “variable range hopping” mechanism.