Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

► Mg-doped Ge2Sb2Te5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent MgSb and MgTe bonds contribute to the enhancement thermal stability in Mg-doped GST films.