کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5354146 | 1503583 | 2016 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation](/preview/png/5354146.png)
چکیده انگلیسی
Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266Â nm, pulse duration of 20Â ns, and repetition rate of 30Â kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 384, 30 October 2016, Pages 353-359
Journal: Applied Surface Science - Volume 384, 30 October 2016, Pages 353-359
نویسندگان
Junsu Park, Young-Gwan Sin, Jae-Hyun Kim, Jaegu Kim,