Study on WSb3Te material for phase-change memory applications

The phase-change performance of WxSb3Te material were systemically investigated by in situ resistance-temperature measurement, X-ray diffraction (XRD), Raman scattering, adhesive strength test and transmission electron microscope (TEM) in this paper. Experimental results show that the thermal stability of Sb3Te was increased significantly with W doping. XRD and TEM results prove that the incorporation of W plays a role in suppressing the crystallization of Sb3Te films, causing smaller grain size. Furthermore, the adhesive strength between W electrode and phase-change material was increased obviously by W addition and a relatively rapid SET/RESET operation of 10 ns is realized with large sensing margin.