Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma

► We investigated pattering processes of organic materials. ► We attempted to conduct a simplified model-based analysis of the CHF3/O2 plasma. ► A small addition of CHF3 to the O2 plasma produced a high etch rate. ► The surface energy was decreased with increasing fluorocarbon containing gas. ► The decreased surface energy is related to the functional groups of CFx polymer.