کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5354530 | 1503596 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ionoluminescence study of Znâ and Oâ implanted ZnO crystals: An additional perspective
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An investigation into the role of native point defects on the optical properties of ZnO using ion implantation, rapid thermal annealing (RTA) and ionoluminescence (IL) is presented. Low-energy (60 keV) fixed-fluence (8 Ã 1015 cmâ2) Znâ and Oâ implantation has been used to directly introduce native point defects into ZnO single crystals. It is shown that annealing of implanted samples in Ar at T = 1000 °C for 2 min amplifies the deep band emission (DBE) peak centered around 2.4 eV while at the same time revealing subtle differences not clearly resolved in similar implanted samples treated under prolonged annealing. Particularly, a relative shift in the DBE peak maxima of the O and Zn doped samples subjected to RTA is observed. Gaussian decomposition of the IL spectra show distinct enhancements of the red (1.62 eV) and yellow (2.15 eV) emission bands in the Oâ implanted sample and the green (2.36 eV) emission band in the Znâ implanted sample. Based on these results, and recent density functional theory (DFT) calculations, we have proposed a possible energy level scheme for some common ZnO native point defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 371, 15 May 2016, Pages 28-34
Journal: Applied Surface Science - Volume 371, 15 May 2016, Pages 28-34
نویسندگان
E.N. Epie, W.K. Chu,