کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5354699 | 1503577 | 2017 | 37 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the growth and characterization of self-assembled InAs/GaAs quantum dots (QDs). The influence of the systematically changed growth conditions on the opto-electronic and structural properties of the QDs were investigated. Combination of the amount of the deposited InAs, growth temperature and growth rate were optimized for low As/In flux ratio to obtain well-resolved ground and excited states in the low temperature photoluminescence (PL) spectra. SEM and TEM techniques were also used for the characterization of QDs. The results were evaluated simply through the conservation of mass approximation and the x-ray diffraction measurements with fitted curves. The extracted InAs and wetting layer thicknesses were brought out that the XRD analysis reflects the overall tendency of the QD density change and WL behaviors in response to the changes in growth conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 392, 15 January 2017, Pages 817-825
Journal: Applied Surface Science - Volume 392, 15 January 2017, Pages 817-825
نویسندگان
Samet Ozdemir, Y. Eren Suyolcu, Servet Turan, Bulent Aslan,